NOTE: Course information changes frequently, including Methods of Instruction. Please revisit these pages periodically for the most recent and up-to-date course information. | |
Fall 2022 Electrical Engineering E6302 section 001 MOS TRANSISTORS | |
Call Number | 12514 |
Day & Time Location |
W 4:10pm-6:40pm To be announced |
Points | 3 |
Grading Mode | Standard |
Approvals Required | None |
Instructor | Yannis P Tsividis |
Type | LECTURE |
Method of Instruction | In-Person |
Course Description | Operation and modeling of MOS transistors. MOS two- and three-terminal structures. The MOS transistor as a four-terminal device; general charge-sheet modeling; strong, moderate, and weak inversion models; short-and-narrow-channel effects; ion-implanted devices; scaling considerations in VLSI; charge modeling; large-signal transient and small-signal modeling for quasistatic and nonquasistatic operation. |
Web Site | Vergil |
Department | Electrical Engineering |
Enrollment | 50 students (50 max) as of 4:34PM Tuesday, August 9, 2022 |
Status | Full |
Subject | Electrical Engineering |
Number | E6302 |
Section | 001 |
Division | School of Engineering and Applied Science: Graduate |
Open To | Engineering:Undergraduate, Engineering:Graduate, GSAS |
Campus | Morningside |
Section key | 20223ELEN6302E001 |
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