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NOTE: Course information changes frequently, including Methods of Instruction. Please revisit these pages periodically for the most recent and up-to-date course information. | |
Fall 2022 Electrical Engineering E6302 section 001 MOS TRANSISTORS | |
| Call Number | 12514 |
| Day & Time Location |
W 4:10pm-6:40pm 1127 Seeley W. Mudd Building |
| Points | 3 |
| Grading Mode | Standard |
| Approvals Required | None |
| Instructor | Yannis P Tsividis |
| Type | LECTURE |
| Method of Instruction | In-Person |
| Course Description | Operation and modeling of MOS transistors. MOS two- and three-terminal structures. The MOS transistor as a four-terminal device; general charge-sheet modeling; strong, moderate, and weak inversion models; short-and-narrow-channel effects; ion-implanted devices; scaling considerations in VLSI; charge modeling; large-signal transient and small-signal modeling for quasistatic and nonquasistatic operation. |
| Web Site | Vergil |
| Department | Electrical Engineering |
| Enrollment | 36 students (60 max) as of 6:22PM Friday, December 2, 2022 |
| Subject | Electrical Engineering |
| Number | E6302 |
| Section | 001 |
| Division | School of Engineering and Applied Science: Graduate |
| Open To | Engineering:Undergraduate, Engineering:Graduate, GSAS |
| Campus | Morningside |
| Section key | 20223ELEN6302E001 |
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